| PART |
Description |
Maker |
| 0153-5-15-15-30-27-04-0 0153-5-15-01-30-27-04-0 01 |
PIN RECEPTACLES
|
Mill-Max Mfg. Corp.
|
| MSM538001E MSM538001E-XXGS-K MSM538001E-XXRS |
1,048,576字8位MASKROM
From old datasheet system
1,048,576-Word x 8-Bit MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
|
| ADR380 ADR380ART-REEL ADR380ART-REEL7 ADR381 ADR38 |
2.048 V and 2.5 V Bandgap Voltage References
2.048 V Bandgap Voltage Reference
Precision Low-Drift 2.048 V/2.500 V SOT-23 Voltage References
|
AD[Analog Devices]
|
| HM514400A HM514400AJ-6 HM514400AJ-7 HM514400AJ-8 H |
1,048,576-word x 4-bid DRAM, 70ns
1,048,576-WORD x 4-BIT DYNAMIC RAM
1,048,576-word x 4-bid DRAM, 60ns
1,048,576-word x 4-bid DRAM, 80ns
|
HITACHI[Hitachi Semiconductor]
|
| HM514400ALT-7 HM514400ALZ-6 HM514400ALZ-8 HM514400 |
JT 42C 42#22 SKT WALL RECP
1,048,576-WORD x 4-BIT DYNAMIC RAM 1,048,576字4位动态随机存储器
LJT 37C 37#22D SKT RECP
|
Hitachi,Ltd.
|
| MSM531602E MSM531602E-XXGS-K MSM531602E-XXRS MSM53 |
1,048,576-Word X 16-Bit or 2,097,152-Word x 8-Bit MASKROM 1,048,576字16位或2097152字8MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
|
| NM27C010 27C010 |
1,048,576-Bit (128K x 8) High Performance CMOS EPROM 1,048,576位（128K的8）高性能CMOS存储
1 /048 /576-Bit (128K x 8) High Performance CMOS EPROM
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power
1,048,576 words x 16 bit DRAM, 70ns, low power
1,048,576 words x 16 bit DRAM, 60ns, low power
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
|
| 87220-1 87220-2 87220-3 87220-4 87220-5 87220-6 87 |
AMPMODU .025 [0.64] Square Interconnection System
AMPMODU Headers and Receptacles, .100 [2.54] Centerline
AMPMODU Headers and Receptacles, .100 [2.54] Centerline
|
Tyco Electronics
|
| GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C181 |
1,048,576 words x 16 bit CMOS DRAM, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
HYNIX[Hynix Semiconductor]
|
